PMBTA06,215 datasheet

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• Маркировка
  PMBTA06,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMBTA06,215 Collector Current (dc) (max): 500mA Collector- Emitter Voltage Vceo Max: 80 V Collector-base Voltage: 80V Collector-emitter Voltage: 80V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Dc Current Gain (min): 100 Emitter- Base Voltage Vebo: 4 V Emitter-base Voltage: 4V Frequency (max): 100MHz Frequency - Transition: 100MHz ID_COMPONENTS: 1949779 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 568-1745-2, 933776020215, PMBTA06 T/R
• Количество страниц
  6 шт.
• Формат
  PDF

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• Размер файла
  50,37 KB

PMBTA06,215 datasheet скачать

PMBTA06,215 datasheet